Sterilization of Polymeric Object by Plasma-Based Ion Implantation
نویسندگان
چکیده
منابع مشابه
Plasma-based ion implantation and deposition:
After pioneering work in the 1980s, plasma-based ion implantation (PBII) and plasma-based ion implantation and deposition (PBIID) can now be considered mature technologies for surface modification and thin film deposition. This review starts by looking at the historical development and recalling the basic ideas of PBII. Advantages and disadvantages are compared to conventional ion beam implanta...
متن کاملPlasma-based ion implantation utilising a cathodic arc plasma
Plasma-based ion implantation (PBII) is usually carried out with isotropic gaseous plasmas, such as a discharge in nitrogen. More recently, it has been applied using drifting plasmas, such as those produced by cathodic arcs, in order to allow efficient implantation of metallic species. The condensable nature of a cathodic arc plasma allows for the deposition of ion-stitched thin film coatings, ...
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Experiments are reported in which two configurations for ablation-plasma-ion-implantation ~APII! are characterized by diagnostics and compared. The first configuration oriented the target parallel to the deposition substrate. This orientation yielded ion-beam-assisted deposition of thin films. A delay (.5 ms) between laser and high voltage was necessary for this geometry to avoid arcing between...
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Plasma immersion ion implantation (PIII) is an established technique in certain niche microelectronics applications such as the synthesis of silicon-oninsulator. In other applications such as shallow junction formation by plasma doping, trench doping, and fabrication of blue light emitting materials, PIII has unique advantages over conventional techniques and may be the technique of choice in t...
متن کاملPerforated shield for plasma immersion ion implantation
A plasma treatment system (200) for implantation with a novel susceptor with a perforated shield (201). The system (200) has a variety of elements such as a chamber in which a plasma is generated in the chamber. The system (200) also has a susceptor disposed in the chamber to support a silicon substrate, which has a surface. The perforated shield (201) draws ions from the implantation toward an...
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ژورنال
عنوان ژورنال: Transactions of the Materials Research Society of Japan
سال: 2011
ISSN: 1382-3469,2188-1650
DOI: 10.14723/tmrsj.36.87